A3S12D30ETP Datasheet | Powerchip

512Mb DDR SDRAM Specification A3S12D30ETP A3S12D40ETP Powerchip Semiconductor Corp. No.12 Li-Hsin Rd.1,Science-based Industrial Park ,Hsin-Chu Taiwan, R.O.C. TEL:886-3-5795000 FAX:886-3-5792168 Free Datasheet http://..net/ Powerchip Semiconductor Corporation A3S12D30/40ETP 512Mb DDR Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION A3S12D30ETP is a 4-bank x 16,777,216-word x 8-bit, A3S12D40ETP is a 4-bank x 8,388,608-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output...