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BS08D-112 - Silicon Bilateral Switch

General Description

The BS08D bilateral switch is a silicon planar monolithic integrated circuit with the electrical characteristics of a bilateral thyristor.

The device is designed to switch at 7 to 9 volts with a 0.01%/°C temperature coefficient and have excellently matched characteristics in both directions.

Key Features

  • £ Low Switching Voltage of 7 to 9 Volts £ Excellent Switching Voltage Temperature Characteristics (0.01%/°C) £ High Reliability Devices £ Gate Electrode Facilitating Switching Operation Control and Synchronization.

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Other Datasheets by Powerex, Inc

Part Number Description
BS08D-T112 Silicon Bilateral Switch
BS08D Silicon Bilateral Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 BS08D-112 BS08D-T112 Silicon Bilateral Switch OUTLINE DRAWING C B J A H D D GG F E ➀➁➂ CONNECTION DIAGRAM ➀ T2 TERMINAL ➁ GATE ➂ T1 TERMINAL Outline Drawing Dimensions Inches A 0.55 Min. B 0.12 Max. C 0.16 D 0.39 E 0.098 Max. F 0.016 G 0.05 ± 0.012 H 0.018 Millimeters 14.0 Min. 3.0 Max. 4.0 1.0 2.5 Max. 0.4 1.27 0.45 5/05 rev.2 Description: The BS08D bilateral switch is a silicon planar monolithic integrated circuit with the electrical characteristics of a bilateral thyristor. The device is designed to switch at 7 to 9 volts with a 0.01%/°C temperature coefficient and have excellently matched characteristics in both directions.