• Part: CM100DY-12H
  • Description: Dual IGBT Module
  • Manufacturer: Powerex, Inc
  • Size: 57.46 KB
Download CM100DY-12H Datasheet PDF
Powerex, Inc
CM100DY-12H
CM100DY-12H is Dual IGBT Module manufactured by Powerex, Inc.
Description : Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All ponents and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G2 E2 C2E1 E2 C1 E1 G1 Features : - Low Drive Power - Low VCE(sat) - Discrete Super-Fast Recovery (70ns) Free-Wheel Diode - High Frequency Operation (20-25k Hz) - Isolated Baseplate for Easy Heat Sinking Applications: - AC Motor Control - Motion/Servo Control - UPS - Welding Power Supplies - Laser Power Supplies Ordering Information: Example: Select the plete part module number you desire from the table below -i.e. CM100DY-12H is a 600V (VCES), 100 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 12 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.150± 0.01 1.57 1.34 1.22 Max. 0.90 0.85 0.79 0.71 Millimeters 94.0 80.0± 0.25 40.0 34.0 31.0 Max. 23.0 21.5 20.0 18.0 Dimensions K L M N P Q R S Inches 0.67 0.63 0.51 0.47 0.28 0.256 Dia. 0.16 M5 Metric Millimeters 17.0 16.0 13.0 12.0 7.0 Dia. 6.5 4.0 M5 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DY-12H Dual IGBTMOD™ H-Series Module 100 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation - Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd - - -...