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CM150TF-12H - IGBT Module

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery (70ns) Free-Wheel Diode.
  • High Frequency Operation (20-25kHz).
  • Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM150TF-12H

Datasheet Details

Part number CM150TF-12H
Manufacturer Powerex Power Semiconductors
File Size 63.20 KB
Description IGBT Module
Datasheet download datasheet CM150TF-12H Datasheet
Additional preview pages of the CM150TF-12H datasheet.

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Full PDF Text Transcription

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CM150TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 150 Amperes/600 Volts B D X Q X Q X Z - M5 THD (7 TYP.) S N Bu P Eu P Bv P Ev P BwP EwP P R L C N P P Bu N Eu N Bv N Ev N BwN EwN J TYP U N V W A K T G F U W AA M M E AA Y - DIA. (4 TYP.) .110 TAB H J V P BuP EuP u BvP EvP v BwP EwP w P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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