CM200DU-12H Datasheet PDF - Powerex Power Semiconductors Dual IGBT Module Specs

CM200DU-12H - Dual IGBT Module

Datasheet Summary

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Features

Low Drive Power.
Low VCE(sat).
Discrete Super-Fast Recovery Free-Wheel Diode.
Isolated Baseplate for Easy Heat Sinking.

Datasheet Details

Part number	CM200DU-12H
Manufacturer	Powerex Power Semiconductors
File Size	58.04 KB
Description	Dual IGBT Module
Datasheet	CM200DU-12H Datasheet
Additional preview pages of the CM200DU-12H datasheet.

📁 Similar Datasheet

CM200DU-12H - IGBT Module (Mitsubishi Electric Semiconductor)

CM200DU-12F - IGBT Module (Mitsubishi)

CM200DU-24F - IGBT Module (Mitsubishi Electric Semiconductor)

CM200DU-24H - IGBT MODULES (Mitsubishi Electric Semiconductor)

CM200DU-34KA - IGBT Module (Mitsubishi Electric)

CM200DC-24NFM - Dual IGBT (Powerex)

CM200DX-24S - IGBT Modules (Mitsubishi)

CM200DY-12H - IGBT Module (Mitsubishi Electric Semiconductor)

CM200DY-12NF - IGBT Module (Mitsubishi Electric Semiconductor)

CM200DY-13T - IGBT Modules (Mitsubishi)

Full PDF Text Transcription

Click to expand full text

CM200DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 200 Amperes/600 Volts TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N 0.110 - 0.5 Tab P S R T E2 G2 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Published: Mar 23, 2005 |