Datasheet4U Logo Datasheet4U.com

CM200DU-34KA - Dual IGBT Module

General Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Key Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • Isolated Baseplate for Easy Heat Sinking Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.33 3.15 3.66± 0.01 2.44± 0.01 0.83 0.16 0.24 0.59 0.55 Millimeters 110.0 80.0 93.0± 0.25 62.0± 0.25 21.0 4.0 6.0 15.0 14.0 Dimensions M N P Q R S T V W X Inches 0.33 0.10 0.85 0.98 0.86 M6 0.26 Dia. 0.02 0.110 1.08 Millimeters 8.5 2.5 21.6 25.0 21.75 M6 6.5 Dia. 0.5.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CM200DU-34KA IGBT Module Mitsubishi Electric
CM200DU-12F IGBT Module Mitsubishi
CM200DU-12H IGBT Module Mitsubishi Electric Semiconductor
CM200DU-24F IGBT Module Mitsubishi Electric Semiconductor
CM200DU-24H IGBT MODULES Mitsubishi Electric Semiconductor

Other Datasheets by Powerex, Inc

Part Number Description
CM200DU-12F IGBT Module
CM200DU-12H Dual IGBT Module
CM200DU-24F IGBT Module
CM200DU-24H Dual IGBT Module
CM200DY-12H Dual IGBT Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CM200DU-34KA Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ KA-Series Module 200 Amperes/1700 Volts A TC Measured Point D T - (4 TYP.) H G2 F B E R CM C2E1 25 C L E2 25 C1 E2 J E1 G1 XH S - NUTS (3 TYP) Q Q P N G V - THICK x W - WIDE TAB (4 PLACES) K K K M C LABEL F G2 E2 C2E1 E2 C1 E1 G1 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.