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CM200DY-28H - Dual IGBT Module

Datasheet Summary

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery (135ns) Free-Wheel Diode.
  • High Frequency Operation (20-25kHz).
  • Isolated Baseplate for Easy Heat Sinking.

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Datasheet Details

Part number CM200DY-28H
Manufacturer Powerex Power Semiconductors
File Size 60.45 KB
Description Dual IGBT Module
Datasheet download datasheet CM200DY-28H Datasheet
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CM200DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ H-Series Module 200 Amperes/1400 Volts A B F F G P C2E1 E2 C1 E2 G2 C D G1 E1 J P K N - DIA. (4 TYP.) M M Q - M6 THD (3 TYP.) R .110 TAB L E H M Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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