CM300DU-12F Datasheet PDF - Powerex Power Semiconductors IGBT Module Specs

CM300DU-12F - IGBT Module

Datasheet Summary

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Features

Low Drive Power.
Low VCE(sat).
Discrete Super-Fast Recovery Free-Wheel Diode.
Isolated Baseplate for Easy Heat Sinking.

Datasheet Details

Part number	CM300DU-12F
Manufacturer	Powerex Power Semiconductors
File Size	67.52 KB
Description	IGBT Module
Datasheet	CM300DU-12F Datasheet
Additional preview pages of the CM300DU-12F datasheet.

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Full PDF Text Transcription

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CM300DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 300 Amperes/600 Volts TC MEASURING POINT A D T (4 TYP.) F G2 B E CM E2 H U J H C2E1 E2 C1 E1 G1 V Q S - NUTS (3 TYP) K K Q K P N R M G C L G2 E2 RTC C2E1 E2 RTC E1 G1 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Published: Mar 23, 2005 |