Datasheet4U Logo Datasheet4U.com

CM350DU-5F - IGBT Module

Datasheet Summary

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • High Frequency Operation (15-20kHz).
  • Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.33 3.66± 0.01 3.15 2.44± 0.01 0.55 0.86 0.94 0.24 Millimeters 110.0 93.0± 0.25 80.0 62.0± 0.25 14.0 21.75 24.0 6.0 Dimensions J K L M N P Q R Inches 0.59 0.26 Dia. 1.14 +0.04/-0.02 0.71 0.33 0.28.

📥 Download Datasheet

Datasheet preview – CM350DU-5F

Datasheet Details

Part number CM350DU-5F
Manufacturer Powerex Power Semiconductors
File Size 55.55 KB
Description IGBT Module
Datasheet download datasheet CM350DU-5F Datasheet
Additional preview pages of the CM350DU-5F datasheet.

📁 Similar Datasheet

  • CM350DU-5F - IGBT Module (Mitsubishi Electric Semiconductor)
  • CM3500 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (Pan Jit International Inc.)
  • CM3500 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (TRSYS)
  • CM3501 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (Pan Jit International Inc.)
  • CM3501 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (TRSYS)
  • CM3502 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (Pan Jit International Inc.)
  • CM3502 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (TRSYS)
  • CM3504 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (Pan Jit International Inc.)
  • CM3504 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (TRSYS)
  • CM3506 - HIGH CURRENT SILICON BRIDGE RECTIFIERS (Pan Jit International Inc.)
Other Datasheets by Powerex Power Semiconductors

Full PDF Text Transcription

Click to expand full text
CM350DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 350 Amperes/250 Volts A B TC Measured Point E K 4 - Mounting Holes H D C F J CM H 3 - M6 NUTS R R G 0.110 - 0.5 Tab M P M P M N L Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Published: |