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CM400DU-24F - Dual IGBT Module

General Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Key Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • Isolated Baseplate for Easy Heat Sinking Millimeters 14.5 40.0 65.0 M8 8.0 8.0 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 5.51 5.12 5.12 1.38 +0/-0.02 4.33±0.01 4.33±0.01 0.39 0.45 0.54 1.72 1.42 0.39 0.80 Millimeters 140.0 130.0 130.0 35.0 +0/-0.5 110.0±0.25 110.0±0.25 10.0 11.5 13.8 43.8 36.0 10.0 20.4 Dimensions P Q R S T U V W X Y Z AA Inch.

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📁 Similar Datasheet

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CM400DU-24F IGBT MODULES Mitsubishi Electric
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Other Datasheets by Powerex, Inc

Part Number Description
CM400DU-12F IGBT Module
CM400DU-12H Dual IGBT Module
CM400DU-12NFH IGBT Module
CM400DU-34KA Dual IGBT Module
CM400DU-5F IGBT Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CM400DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ F-Series Module 400 Amperes/1200 Volts A B F C L M TC MEASURED POINT G T - (4 TYP.) N R Z G2 E2 P C L Q E2 C1 C E AA X E1 G1 Y P W(4 PLACES) S - (3 PLACES) L K J H LABEL C2E1 V U D G2 E2 RTC C2E1 E2 RTC E1 G1 C1 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.