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CM50DY-24H - Dual IGBT Module

Datasheet Summary

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery (135ns) Free-Wheel Diode.
  • High Frequency Operation (20-25kHz).
  • Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM50DY-24H

Datasheet Details

Part number CM50DY-24H
Manufacturer Powerex Power Semiconductors
File Size 58.22 KB
Description Dual IGBT Module
Datasheet download datasheet CM50DY-24H Datasheet
Additional preview pages of the CM50DY-24H datasheet.

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Full PDF Text Transcription

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CM50DY-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ H-Series Module 50 Amperes/1200 Volts A B C F F K E2 G2 Q - DIA. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R .110 TAB H L H P E G Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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