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CM600DU-5F - Dual IGBT Module

General Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Key Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • Isolated Baseplate for Easy Heat Sinking Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.33 3.15 3.66± 0.01 2.44± 0.01 0.83 0.16 0.24 0.59 0.55 Millimeters 110.0 80.0 93.0± 0.25 62.0± 0.25 21.0 4.0 6.0 15.0 14.0 Dimensions M N P Q R S T V W X Inches 0.33 0.10 0.85 0.98 0.86 M6 0.26 Dia. 0.02 0.110 1.08 Millimeters 8.5 2.5 21.6 25.0 21.75 M6 6.5 Dia. 0.5.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CM600DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ F-Series Module 600 Amperes/250 Volts A TC Measured Point D T - (4 TYP.) H G2 F B E R CM C2E1 25 C L E2 25 C1 E2 J E1 G1 XH S - NUTS (3 TYP) Q Q P N G V - THICK x W - WIDE TAB (4 PLACES) K K K M C LABEL F G2 E2 C2E1 E2 C1 E1 G1 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.