Datasheet4U Logo Datasheet4U.com

CM600HU-12F - IGBT Module

General Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode.

Key Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • Isolated Baseplate for Easy Heat Sinking.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CM600HU-12F IGBT Module Mitsubishi Electric Semiconductor
CM600HU-12H IGBT Module Mitsubishi Electric Semiconductor
CM600HU-24F IGBT MODULES Mitsubishi Electric Semiconductor
CM600HU-24H IGBT Module Mitsubishi Electric Semiconductor
CM600HA-12H IGBT Module Mitsubishi Electric Semiconductor

Other Datasheets by Powerex, Inc

Part Number Description
CM600HU-12H IGBT Module
CM600HU-24F IGBT Module
CM600HU-24H IGBT Module
CM600HA-12H IGBT Module
CM600HA-24H IGBT Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CM600HU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD™ 600 Amperes/600 Volts N (2 TYP) A D G F G C L M (2 TYP.) E C P E B E CM H L (4 TYP) J K R TC MEASURING POINT Q C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.