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CM900DU-24NF - IGBT Module

Datasheet Summary

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM900DU-24NF

Datasheet Details

Part number CM900DU-24NF
Manufacturer Powerex Power Semiconductors
File Size 78.72 KB
Description IGBT Module
Datasheet download datasheet CM900DU-24NF Datasheet
Additional preview pages of the CM900DU-24NF datasheet.

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Full PDF Text Transcription

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CM900DU-24NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Mega Power Dual™ IGBTMOD 900 Amperes/1200 Volts TC MEASURED POINTS (THE SIDE OF CU BASEPLATE) P (8 PLACES) U H A D G H L K C2E1 C S G E T J E2 C1 U V H G H H H H G H R (9 PLACES) M L F E G C B E C J F LABEL Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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