CT60AM-18F
MITSUBISHI Nch IGBT
INSULATED GATE BIPOLAR TRANSISTOR
OUTLINE DRAWING
20MAX.
Dimensions in mm 5 2
φ3.2
0.5 3
5.45 5.45 q VCES 900V q IC 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage
GATE COLLECTOR EMITTER COLLECTOR
TO-3PL
APPLICATION Microwave oven, Electromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM IE PC Tj T stg
(Tc = 25°C)
Parameter Collector-Emitter Voltage Gate-Emitter Voltage Peak Gate-Emitter Voltage Collector Current Collector Current (Pulse) Emitter Current Maximum Power Dissipation Junction Temperature Storage Temperature VGE = 0V
Conditions
Ratings 900 ±25 ±30 60 120 40 180
- 40 ~ +150
- 40 ~ +150
20.6MIN.
Unit V V V A A A W...
