PS11017 Overview
MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Application <Application Specific Specific Intelligent Intelligent Power Power Module> Module> t to c hang e. Some param e tric li re s mits a ubjec PS11017 PS11017 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED TYPE TYPE PS11017 INTEGRATED FUNCTIONS.
PS11017 Key Features
- 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technologies
- Circuit for dynamic braking of motor regenerative energy
- For P-Side IGBTs : Drive circuit, High voltage isolated high-speed level shifting, Short-circuit protection (SC), Bootst
- For N-Side IGBTs : Drive circuit, Short circuit protection (SC), Control-supply Under voltage and Over voltage protectio
- For Brake circuit IGBT : Drive circuit
- Warning and Fault signaling : FO1 : Short circuit protection for lower-leg IGBTs and Input interlocking against spurious
- For system feedback control : Analogue signal feedback reproducing actual inverter phase current (3φ)
- Input Interface : 5V CMOS/TTL patible, Schmitt trigger input, and Arm-Shoot-Through interlock protection