PS12018-A Overview
MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Application <Application Specific Specific Intelligent Intelligent Power Power Module> Module> ARY N I M I PREL tion. ifica h l spec ct to c a finaare su bje t o n is is ic limits h T : Notice pa rametr Some PS12018-A PS12018-A FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED TYPE TYPE PS12018-A INTEGRATED FUNCTIONS.
PS12018-A Key Features
- 3-Phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technologies
- Circuit for dynamic braking of motor regenerative energy
- Inverter output current capability Io (Note 1) : Type Name PS12018-A 100% load 9.2A (rms) 150% over load 13.8A (rms), 1m
- For P-Side IGBTs : Drive circuit, High-speed photo-couplers, Short circuit protection (SC), Bootstrap circuit supply sch
- For N-Side IGBTs : Drive circuit, Short-circuit protection (SC), Control supply Under voltage and Over voltage protectio
- For Brake circuit IGBT : Drive circuit
- Warning and Fault signaling : FO1 : Short circuit protection for lower-leg IGBTs and Input interlocking against spurious
- For system feedback control : Analogue signal feedback reproducing actual inverter output phase current (3φ)
- Input Interface : 5V CMOS/TTL patible, Schmitt trigger input, and Arm-Shoot-Through interlock protection
