Powerex Corporation CY20AAJ-8F
Nch IGBT for STROBE FLASHER
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature VGE = 0V VCE = 0V Conditions Ratings 400 ±6 ±8 130 –40 ~ +150 –40 ~ +150 Unit V V V A °C °C Sep. 2000 VCE = 0V, tw = 10s CM = 400µF see figure1 MITSUBISHI IGBT CY20AAJ-8F Nch IGBT for STROBE FLASHERELECTRICAL CHARACTERISTICS
Symbol Parameter (Tj = 25° C) Test conditions IC = 1mA, VGE = 0V IG = ± 100µA, VCE = 0V VCE = 400V, VGE = 0V VGE = ±6V, VCE = 0V VCE = 10V, IC = 1mA Limits Min. 450 ±8 — — — Typ. — — — — — Max. — — 10 ±10 1.5 Unit V V µA µA V V (BR) CES Collector-emitter breakdown voltage V (BR) GES Gate-emitter breakdown voltage ICES IGES VGE (th) Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Figure1. MAXIMUM PULSE COLLECTOR CURRENT PULSE COLLECTOR CURRENT ICM (A) 160 120 CM = 400µF 80 40 0 0 2 4 6 8 GATE-EMITTER VOLTAGE VGE (V) APPLICATION EXAMPLE TRIGGER SIGNAL Vtrig IXe CM + Vtrig IGBTE GATE VG VOLTAGE VCM – RG VCE VG IGBT Xe TUBE CURRENT IXE Sep.