FY8ABJ-03 Datasheet PDF

MAXIMUM RATINGS

Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings –30 ±20 –8 –56 –8 –2.1 –8.4 2.0 –55 ~ +150 –55 ~ +150 0.07 Unit V V A A A A A W °C °C g Sep.1998 L = 10µH MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS

Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25°C) Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –8A, VGS = –10V ID = –4A, VGS = –4V ID = –8A, VGS = –10V ID = –8A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –30 — — –1.5 — — — — — — — — — — — —...