Powersem GmbH PSHI06
IGBT Module H-Bridge Configuration
| Part No. | PSHI06 |
|---|---|
| Datasheet | PSHI06 Download |
| Manufacturer | Powersem GmbH |
| Description | IGBT Module H-Bridge Configuration |
| Buy | Stock & Price |
FEATURES
MAXIMUM RATINGS
*NTC optional VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive TC = 25°C●
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● Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.4 2.9 2.9 6.5 0.6 2.7 100 VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C 4.5 V V V mA mA nA ns ns ns ns mJ mJ nF NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Isolation voltage 3000 V∼ UL registered, E 148688 Advantages space and weight savings reduced protection circuits package des...
