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PSHI75D - IGBT Module H-Bridge Configuration

Features

  • Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.8 4.5 2.8 6.5 0.8 4.4 100 50 55 300 30 1.8 1.4 2.8 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF 0.6 K/W K/W NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability.

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Datasheet Details

Part number PSHI75D
Manufacturer Powersem GmbH
File Size 123.14 KB
Description IGBT Module H-Bridge Configuration
Datasheet download datasheet PSHI75D Datasheet

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Full PDF Text Transcription

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ECO-PAC 2 PSHI 75D/06* H-Bridge Configuration Preliminary Data Sheet TM IGBT Module IC25 = 69 A VCES = 600 V VCE(sat)typ. = 2.3 V Short Circuit SOA Capability Square RBSOA F10 A1 H13 S18 N9 NTC P18 PSHI 75D/06* *NTC optional IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 69 48 100 VCES 10 208 V V A A A µs W Features • • • • • • • • • • • • • • • • • • • Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.8 4.5 2.8 6.5 0.8 4.4 100 50 55 300 30 1.8 1.4 2.8 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF 0.
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