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ECO-PACTM 2
Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
PSHM 120/01
L4 L6 L9 P18 R18 A1 E10 F10 K12 NTC K13
ID25 VDSS RDSon trr
= 75 A = 100 V = 25 mΩ < 200 ns
Preliminary Data Sheet
MOSFETs
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions Maximum Ratings 100 100 ±20 ±30 75 300 75 30 5 300 V V V V A A A mJ V/ns W
Features • HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reve
PSHM120 Datasheet
