• Part: PSKH162
  • Description: Thyristor/Diode Modules
  • Category: Diode
  • Manufacturer: Powersem
  • Size: 240.63 KB
Download PSKH162 Datasheet PDF
Powersem
PSKH162
PSKH162 is Thyristor/Diode Modules manufactured by Powersem.
Features - - (di/dt)cr TVJ = TVJM repetitive, IT = 500 A f =50 Hz, t P =200 µs VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = 500 A di G/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM t P = 30 µs t P = 500 µs A/µs V/µs - - International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight Applications W W W V °C °C °C V~ V~ - - - - - Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches 50/60 Hz, RMS IISOL ≤ 1 m A t = 1 min t=1s 3000 3600 Advantages - - Mounting torque (M6) Terminal connection torque (M6) Typical including screws 2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 125 g - - Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM Gmb H, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 .Data Sheet.in Symbol IRRM, IDRM VT, VF VT0 r T VGT IGT VGD IGD IL IH tgd tq QS IRM Rth JC Rth JK d S d A a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 300 A; TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM Characteristic Values 10 1.25 0.88 1.15 2.5 2.6 150 200 0.2 10 300 200 2 150 550 235 0.155 0.0775 0.225 0.1125 12.7 9.6 50 m A V V mΩ V V m A m A V m A m A m A µs Fig. 1 Gate trigger characteristics µs µC A K/W K/W K/W K/W mm mm m/s2 TVJ = 25°C; t P = 30 µs; VD = 6 V IG = 0.5 A; di G/dt = 0.5 A/µs TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ...