Datasheet Details
| Part number | PDPM6N20V3 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 244.17 KB |
| Description | P-Channel MOSFET |
| Download | PDPM6N20V3 Download (PDF) |
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| Part number | PDPM6N20V3 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 244.17 KB |
| Description | P-Channel MOSFET |
| Download | PDPM6N20V3 Download (PDF) |
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The enhancement mode MOS is extremely high density cell and low on-resistance.
PDPM6N20V3 P-Channel MOSFET VDS(V) -20 MOSFET Product Summary RDS(on)(mΩ) ID(A) 110 @ VGS=-4.5V -3 Internal structure （S1） 1 （G1） 2 （D2） 3 6 （D1） 5 （G2） 4 （S2） Bottom View （D1） 6 1 （S1） D1 （G2） 5 2 （G1） （S2） 4 D2 3 （D2） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current- Continuous Drain Current- Pulsed Total Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient Symbol VDS VGS ID IDM PD TJ,TSTG Symbol RθJA Value -20 ±12 -3 -10 1 -55 to +150 Units V V A A W ℃ Max.
125 Units ℃/W Rev.06.2 1 www.prisemi.com P-Channel MOSFET PDPM6N20V3 Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Forward Leakage Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(ON) Forward Trans conductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain(Miller) Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Diode Forward Current gFS Qg Qgs Qgd CISS CDSS CRSS td(on) tr td(off) tf VSD IS Conditions ID =-250μA,VGS=0V VDS =-20V,VGS=0V VGS=±12V VDS =VGS, ID =-250μA VGS=-4.5V, ID =-3A VGS=-2.5V, ID =-2A, VDS=-5V, ID =-2.8A ID =-3A, VDS =-10V, VGS =-2.5V VGS=0V, VDS =-10V, f=1MHz VDD=-10V, ID =-1A, VGS=-4.5V , RGEN=10Ω, VGS=0V,IS=-1.3A Min.
Description The enhancement mode MOS is extremely high density cell and low on-resistance.
PDPM6N20V3 P-Channel MOSFET VDS(V) -20 MOSFET Product Summary RDS(on)(mΩ) ID(A) 110 @ VGS=-4.
| Part Number | Description |
|---|---|
| PDPM8PN03R15 | N-Channel MOSFET |
| PDPM8PN30V20A | P-Channel MOSFET |