PDPM6N20V3 Overview
The enhancement mode MOS is extremely high density cell and low on-resistance. 125 Units ℃/W Rev.06.2 1 .prisemi. -1.0 ±100 -1.0 110 140 12 Units V μA nA V mΩ mΩ S nC pF pF pF ns -1.2 V -1.3 A Typical Characteristics VGS VDD VIN RGEN G RL VOUT D S Figure.