PESDHC5D3V3U Datasheet | Prisemi

Description The PESDHC5D3V3U protects sensitive semiconductor ponents from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Feature Applications ¾ 250W peak pulse power per line (t P = 8/20μs) ¾ SOD-523 package ¾ Replacement for MLV(0603) ¾ Unidirectional configurations ¾ Response time is typically < 1 ns ¾ Cellular phones ¾ Portable devices ¾ Digital cameras ¾ Power supplies ¾ Protect one I/O or power line ¾ Low clamping voltage ¾ Ro HS pliant ¾ Transient protection for data lines to IEC 61000-4-2(ESD) ±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns) Mechanical Characteristics ¾ Lead finish:100% matte Sn(Tin) ¾ Mounting position: Any ¾ Qualified max reflow temperature:260℃ ¾ Device meets MSL 1 requirements ¾ Pure tin plating: 7 ~ 17 um ¾ Pin flatness:≤3mil Electronics Parameter Symbol VRWM IR VBR IT IPP VC PPP CJ IF VF Rev.06.1 Parameter Peak Reverse Working Voltage Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Peak Pulse Power Junction Capacitance Forward Current Forward Voltage @ IF VC VBR VRWM IR VF IT .prisemi. ESD Protector Electrical characteristics per line@25℃( unless otherwise specified) Parameter Reverse Stand-off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Clamping Voltage Junction Capacitance Symbol VRWM VBR IR VC VC VC Cj Conditions It = 1m A VRWM = 3.3V T=25℃ IPP = 1A t P = 8/20μs IPP = 5A t P = 8/20μs IPP = 15A t P = 8/20μs VR=0V f =...