PESDNC2FD3V3B
Description
The PESDNC2FD3V3B protects sensitive semiconductor ponents from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.
Feature
- 45W peak pulse power per line (t P = 8/20μs)
- DFN1006-2L package
- Replacement for MLV(0402)
- Bidirectional configurations
- Response time is typically < 1ns
- Low clamping voltage
- Ro HS pliant
- Transient protection for data lines to IEC61000-4-2(ESD)
±30KV(air), ±30KV(contact); IEC61000-4-4 (EFT) 40A (5/50ns)
Applications
- Cellular phones
- Portable devices
- Digital cameras
- Power supplies
DFN1006-2L(Bottom View)
Pin 1
Pin 2
Circuit Diagram
Marking (Top...
