PESDNC3FD5VB Overview
Description
The PESDNC3FD5VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable 1 3 2 Top View.
Key Features
- 100W peak pulse power per line (tP = 8/20μs)
- DFN1006-3L package
- Bidirectional configurations
- Response time is typically < 1ns
- Low clamping voltage
