PESDUC2FD5VBN Datasheet | Prisemi

Description PESDUC2FD5VBN Bi-directional 5V LOW Capacitance ESD Protector The PESDUC2FD5VBN protects sensitive semiconductor ponents from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical. DFN1006-2L(Bottom View) Feature - 80W peak pulse power per line (t P = 8/20μs) - DFN1006-2L package - Response time is typically < 1 ns - Bidirectional configurations - Low clamping voltage - Ro HS pliant - Transient protection for data lines to IEC 61000-4-2(ESD) ±25k V(air), ± 25k V(contact); IEC 61000-4-5 (Lightning) 4A (8/20us) Pin1 Pin2 Circuit Diagram .B1. Pin1 Pin2 Marking (Top View) Applications - Cell phone handsets and accessories - Personal digital assistants (PDA’s) - Notebooks, desktops, and servers - Portable instrumentation - Cordless phones - Digital cameras - Peripherals Rev.06.1 Mechanical Characteristics - Mounting position: Any - Qualified max reflow temperature:260℃ - Device meets MSL 1 requirements - DFN1006-2L without plating .prisemi. ESD Protector Electronics Parameter Symbol VRWM IR VBR IT IPP VC PPP CJ IF VF Parameter Peak Reverse Working Voltage Reverse Leakage Current @...