PESDWC2FD5VB Datasheet | Prisemi

PESDWC2FD5VB ESD Protector Description The PESDWC2FD5VB protects sensitive semiconductor ponents from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical. Feature - 80W peak pulse power per line (t P = 8/20μs) - DFN1006-2L package - Replacement for MLV(0402) - Bidirectional configurations - Response time is typically < 1ns - High ESD protection - Low clamping voltage - Ro HS pliant Applications - Cellular phones - Portable devices - Digital cameras - Power supplies Mechanical Characteristics - Lead finish:100% matte Sn(Tin) - Mounting position: Any - Qualified max reflow temperature:260℃ - Device meets MSL 1 requirements - Pure tin plating: 7 ~ 17 um - Pin flatness:≤3mil Electronics Parameter Symbol VRWM IR VBR IT IPP VC PPP CJ IF VF Parameter Peak Reverse Working Voltage Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test...