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PI50F65T3H1A7 - Insulate-Gate Bipolar Transistor

General Description

PI50F65T3H1A7 Insulate-Gate Bipolar Transistor CE G TO-247-3L

Key Features

  • Trench and field-stop technology.
  • Easy parallel switching capability.
  • High efficiency for inverters.
  • High ruggedness performance.
  • RoHS compliant PI50F65T3H1A7 YYWW Circuit Diagram.

📥 Download Datasheet

Datasheet Details

Part number PI50F65T3H1A7
Manufacturer Prisemi
File Size 1.37 MB
Description Insulate-Gate Bipolar Transistor
Datasheet download datasheet PI50F65T3H1A7 Datasheet

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Full PDF Text Transcription (Reference)

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Description PI50F65T3H1A7 Insulate-Gate Bipolar Transistor CE G TO-247-3L Features  Trench and field-stop technology  Easy parallel switching capability  High efficiency for inverters  High ruggedness performance  RoHS compliant PI50F65T3H1A7 YYWW Circuit Diagram Applications  Industrial UPS  Welding machine  Solar converters  Energy storage  EV charger  PFC applications  Welding machines Marking (Top View) Absolute maximum rating@25℃ Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Forward Current Diode Maximum Forward Current Power Dissipation Operating Junction Temperature Storage Temperature Tc= 25℃ Tc= 100℃ Tc= 100℃ Tc= 25℃ Tc= 100℃ Symbol VCE VGE IC ICM IF IFM PD TVJ TSTG Value 650 ±20 100 50 200 50 200 31