PNMT45V2 Overview
The enhancement mode MOS is extremely high density cell and low on-resistance. 1.2 Units V Conditions IS=0.8A,VGS=0V Rev.06.2 1 .prisemi. Drain-Source On-Resistance Rev.06.2 2 .prisemi.
| Part number | PNMT45V2 |
|---|---|
| Datasheet | PNMT45V2-Prisemi.pdf |
| File Size | 235.46 KB |
| Manufacturer | Prisemi |
| Description | 2.5V Drive N-Channel MOSFET |
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The enhancement mode MOS is extremely high density cell and low on-resistance. 1.2 Units V Conditions IS=0.8A,VGS=0V Rev.06.2 1 .prisemi. Drain-Source On-Resistance Rev.06.2 2 .prisemi.
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