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PNMT45V2 - 2.5V Drive N-Channel MOSFET

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Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PNMT45V2
Manufacturer Prisemi
File Size 235.46 KB
Description 2.5V Drive N-Channel MOSFET
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PNMT45V2 2.5V Drive N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) 45 MOSFET Product Summary RDS(on)(mΩ) ID(A) 100@ VGS=10V 2 110@ VGS=4.5V Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Source diode) current(Body Continuous Pulsed Total Power Dissipation Channel temperature Range of storage temperature Symbol VDS VGS ID ID IS ISP PD Tch Tstg G（1） S（2） Value 45 ±12 2.0 8 0.8 8 1.0 150 -55 to +150 Units V V A A A A W °C °C Thermal resistance Parameter Channel to ambient Symbol Rth(ch-a)* Limits 125 Units ℃/W Body diode characteristics(Source-drain)(Ta=25℃) Parameter Forward voltage Symbol VSD Min. -- Typ. -- Max. 1.
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