The enhancement mode MOS is extremely high density cell and low on-resistance.
This PPM3T18V6 uses advanced trench technology to provide excellent RDS(on), low gate voltages as low as 2.5V.
| Part number | PPM3T18V6 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 269.87 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 PPM3T18V6 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PPM03-S-05ELF | DC/AC Converter | PEAK |
| PPM03-S-09ELF | DC/AC Converter | PEAK |
| PPM03-S-12ELF | DC/AC Converter | PEAK |
| PPM03-S-15ELF | DC/AC Converter | PEAK |
| PPM03-S-24ELF | DC/AC Converter | PEAK |
| Part Number | Description |
|---|---|
| PPM3FD20V1E | P-Channel MOSFET |
| PPM3FD20V1EN | P-Channel MOSFET |
| PPM3FD20V2 | P-Channel MOSFET |
| PPM3FD20V2N | N-Channel MOSFET |
| PPM3GN20V3 | N-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
