PPM3T18V6 - P-Channel MOSFET

Datasheet Summary

Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

This PPM3T18V6 uses advanced trench technology to provide excellent RDS(on), low gate voltages as low as 2.5V.

Prisemi

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Datasheet Details

Part number	PPM3T18V6
Manufacturer	Prisemi
File Size	269.87 KB
Description	P-Channel MOSFET
Datasheet	PPM3T18V6 Datasheet
Additional preview pages of the PPM3T18V6 datasheet.

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Description PPM3T18V6 P-Channel MOSFET The enhancement mode MOS is extremely high density cell and low on-resistance. This PPM3T18V6 uses advanced trench technology to provide excellent RDS(on), low gate voltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications. D（3） VDS(V) >-18 MOSFET Product Summary RDS(on)(mΩ) <20 @ VGS=-4.5V <28 @ VGS=-2.5V <40 @ VGS=-1.8V ID(A) -6 G（1） S（2） Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Value -18 ±12 -6 -24 1.

Published: Aug 12, 2025 |