PPM3T18V6
Description
PPM3T18V6 P-Channel MOSFET
The enhancement mode MOS is extremely high density cell and low on-resistance. This PPM3T18V6 uses advanced trench technology to provide excellent RDS(on), low gate voltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications.
D（3）
VDS(V) >-18
MOSFET Product Summary
RDS(on)(mΩ)
<20 @ VGS=-4.5V <28 @ VGS=-2.5V <40 @ VGS=-1.8V
ID(A) -6
G（1） S（2）
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current
Continuous Pulsed (Note1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM PD TJ,TSTG
Value
-18 ±12 -6 -24 1.4 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Parameter
Thermal Resisitance, Junction-to-Ambient (Note2)
Symbol
RθJA
Value
Unit
℃/W
Rev.06.1
.prisemi.
PPM3T18V6 P-Channel MOSFET
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter...
