| Part number | PPM3T18V6 |
|---|---|
| Datasheet | PPM3T18V6-Prisemi.pdf |
| File Size | 269.87 KB |
| Manufacturer | Prisemi |
| Description | P-Channel MOSFET |
|
|
PPM3T18V6 P-Channel MOSFET The enhancement mode MOS is extremely high density cell and low on-resistance. This PPM3T18V6 uses advanced trench technology to provide excellent RDS(on), low gate voltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications.
| Part Number | Description |
|---|---|
| PPM3FD20V1E | P-Channel MOSFET |
| PPM3FD20V1EN | P-Channel MOSFET |
| PPM3FD20V2 | P-Channel MOSFET |
| PPM3FD20V2N | N-Channel MOSFET |
| PPM3GN20V3 | N-Channel MOSFET |
| PPM523T201E0 | P-Channel MOSFET |
| PPM6N12V10 | P-Channel MOSFET |
| PPM6N15V12 | P-Channel MOSFET |
| PPM6N20V10 | P-Channel MOSFET |
| PPM6N20V5 | P-Channel MOSFET |
