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PPM6N15V12 - P-Channel MOSFET

General Description

The PPM6N15V12 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

High Power and curr

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Datasheet Details

Part number PPM6N15V12
Manufacturer Prisemi
File Size 438.29 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM6N15V12 Datasheet

Full PDF Text Transcription (Reference)

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Description The PPM6N15V12 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS(V) -16 MOSFET Product Summary RDS(on)(mΩ)(Typ) 16@ VGS = -4.5V 22@ VGS = -2.