PPM6N20V10 - P-Channel MOSFET

Prisemi

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

PPM6N20V10 p-channel mosfet by Prisemi - Datasheet Preview

Datasheet Details

Part number	PPM6N20V10
Manufacturer	Prisemi
File Size	240.29 KB
Description	P-Channel MOSFET
Datasheet	PPM6N20V10 Datasheet

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N20V10 P-Channel MOSFET VDS(V) -20 MOSFET Product Summary RDS(on)(mΩ) ID(A) 15@ VGS=-4.5V -10 Internal structure （D）1 （D）2 （G）3 6（D） 5（D） 4（S） Bottom View （D）（D）（G） 1 2 3 D S 6 5 4 （D）（D）（S） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed TA=25℃ TA=70℃ TA=25℃ Total Power Dissipation TA=125℃ Operating and Storage Junction Temperature Range Symbol VDS VGS ID ID PD PD TJ,TSTG Value -20 ±12 -10 -40 2.4 0.