Datasheet Details
| Part number | PPM8P30V8 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 309.80 KB |
| Description | P-Channel MOSFET |
| Download | PPM8P30V8 Download (PDF) |
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| Part number | PPM8P30V8 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 309.80 KB |
| Description | P-Channel MOSFET |
| Download | PPM8P30V8 Download (PDF) |
|
|
|
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（5、6、7、8） VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 20@ VGS=-10V 30@ VGS=-4.5V -8 G（4） S（1、2、3） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Tran conductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol Conditions OFF CHARACTERISTICS BVDSS ID =-250μA,VGS=0V IDSS VDS =-30V,VGS=0V IGSS VDS =0V,VGS=±20V On CHARACTERISTICS(Note 1) VGS(th) RDS(ON) VDS =VGS, ID =-250μA VGS=-10V, ID =-8A VGS=-4.5V, ID =-6A gFS VDS=-15V, ID =-9.1A DYNAMIC PARAMETERS(Note 2) CISS CDSS CRSS VGS=0V, VDS =-15V, f=1.0MHz SWITCHING PARAMETERS(Note 2) td(on) tr td(off) VDD=-15V, VGS =-10V, ID =-1A,RGEN=6Ω tr Qg VDS=-15V, VGS =-10V, Qgs ID =-9.1A Qgd Drain-Source Diode Characteristics Diode Forward Voltage (Note 1) VSD VGS=0V,IS=-2.1A Rev.06.1 1 Min.
-30 - -1 16 25 10 - - - Typ.
PPM8P30V8 P-Channel MOSFET.
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