PPM8P30V8
Description
The enhancement mode MOS is extremely high density cell and low on-resistance. D（5、6、7、8） VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 20@ VGS=-10V 30@ VGS=-4.5V -8 G（4） S（1、2、3）.
- Part: PPM8P30V8
- Description: P-Channel MOSFET
- Category: MOSFET
- Manufacturer: Prisemi
- Size: 309.80 KB