PPM8P30V8 Overview
The enhancement mode MOS is extremely high density cell and low on-resistance. -30 - -1 16 25 10 - - - Typ. P-Channel MOSFET rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage TC =25℃ Continuous Drain Current (TJ =150℃) TC =70℃ TA =25℃ TA =70℃ Drain Current-Pulsed (Note 3) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Thermal Characteristic...