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Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PPMT32V4 P-Channel MOSFET
D（3）
VDS(V) -30
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
67 @ VGS=-4.5V
-4.3
G（1）
Absolute maximum rating@25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM PD TJ,TSTG
S（2）
Value
-30 ±20 -4.3 -20 1.5 -55 to +150
Unit
V V A A W ℃
Thermal resistance
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
RθJA
Value
84
Unit
℃/W
Rev.06.1
1
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PPMT32V4 Datasheet
