PPMT32V4
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PPMT32V4 P-Channel MOSFET
D（3）
VDS(V) -30
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
67 @ VGS=-4.5V
-4.3
G（1）
Absolute maximum rating@25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM PD TJ,TSTG
S（2）
Value
-30 ±20 -4.3 -20 1.5 -55 to +150
Unit
V V A A W ℃
Thermal resistance
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
RθJA
Value
Unit
℃/W
Rev.06.1
.prisemi.
P-Channel MOSFET
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Forward Leakage
Diode Forward Voltage Gate Threshold Voltage
Symbol
BVDSS IDSS IGSS VSD...
