Datasheet Details
| Part number | PPMT32V4 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 222.76 KB |
| Description | P-Channel MOSFET |
| Datasheet | PPMT32V4-Prisemi.pdf |
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Overview: Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPMT32V4 P-Channel MOSFET D（3） VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 67 @ VGS=-4.5V -4.
| Part number | PPMT32V4 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 222.76 KB |
| Description | P-Channel MOSFET |
| Datasheet | PPMT32V4-Prisemi.pdf |
|
|
|
The enhancement mode MOS is extremely high density cell and low on-resistance.
PPMT32V4 P-Channel MOSFET D（3） VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 67 @ VGS=-4.5V -4.3 G（1） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG S（2） Value -30 ±20 -4.3 -20 1.5 -55 to +150 Unit V V A A W ℃ Thermal resistance Parameter Thermal Resistance, Junction-to-Ambient Symbol RθJA Value 84 Unit ℃/W Rev.06.1 1 www.prisemi.com P-Channel MOSFET PPMT32V4 Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Forward Leakage Diode Forward Voltage Gate Threshold Voltage Symbol BVDSS IDSS IGSS VSD VGS(th) Static Drain-Source On-Resistance RDS(ON) Forward Trans conductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain(Miller) Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gFS Qg Qgs Qgd CISS CDSS CRSS td(on) tr td(off) tf Conditions ID =-250μA,VGS=0V VDS =-24V,VGS=0V VGS=±20V VGS =0V, IS =-1A VDS =VGS, ID =-250μA VGS=-10V, ID =-4A VGS=-4.5V, ID =-4A VDS=-5V, ID =-4A ID =-4A, VDS =-15V, VGS =-10V VGS=0V, VDS =-15V, f=1MHz VDD=-15V,VGS=-10V , RL=3.6Ω, RGEN=3Ω Min.
-30 - -1 5.5 - Typ.
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