PSICM4TAT120R16
Description
PSICM4TAT120R16 Si C MOSFET
MOSFET Product Summary
VDS(V) 1200
RDS(on)(mΩ) 16 mΩ@ VGS= 18V
ID(A) 132
Feature
- High Speed Switching with Low Capacitances
- High Blocking Voltage with Low RDS(on)
- Avalanche Ruggednes
D SS G
D GS S
TO-247-4L (Top View)
Applications
- Solar Inverters
- Switch Mode Power Supplies
- High Voltage DC-DC Converters
- Batterry Chargers
Absolute maximum rating@25℃
Parameter Drain-Source Voltage Gate-Source Voltage ( Absolute maximum values）
Gate-Source Voltage ( Remended operational values)
Continuous Drain Current
TC=25℃ TC=100℃
Pulsed drain current (TC = 25°C, tp limited by Tjmax at 1 ms) (TC = 25°C, tp limited by Tjmax at 100 µs)
Power dissipation (TC = 25°C, Tj = 175°C)
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Rev.06.0
KS S
Schematic diagram
Symbol VDS
VGSmax VGSop
ID pulse PD TJ...
