PSICM4TAT120R16 - SiC MOSFET

Description

PSICM4TAT120R16 SiC MOSFET MOSFET Product Summary VDS(V) 1200 RDS(on)(mΩ) 16 mΩ@ VGS= 18V ID(A) 132 Feature High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Avalanche Ruggednes D SS G D GS S TO-247-4L (Top View) D Applications Sola

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Datasheet Details

Part number	PSICM4TAT120R16
Manufacturer	Prisemi
File Size	2.88 MB
Description	SiC MOSFET
Datasheet	PSICM4TAT120R16 Datasheet
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Description PSICM4TAT120R16 SiC MOSFET MOSFET Product Summary VDS(V) 1200 RDS(on)(mΩ) 16 mΩ@ VGS= 18V ID(A) 132 Feature  High Speed Switching with Low Capacitances  High Blocking Voltage with Low RDS(on)  Avalanche Ruggednes D SS G D GS S TO-247-4L (Top View) D Applications  Solar Inverters  Switch Mode Power Supplies  High Voltage DC-DC Converters  Batterry Chargers Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage ( Absolute maximum values） Gate-Source Voltage ( Recommended operational values) Continuous Drain Current TC=25℃ TC=100℃ Pulsed drain current (TC = 25°C, tp limited by Tjmax at 1 ms) (TC = 25°C, tp limited by Tjmax at 100 µs) Power dissipation (TC = 25°C, Tj = 175°C) Operating Junction Temperature Storage Temperature The

Published: Jul 17, 2025 |