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PSICS2DP1200V10N

PSICS2DP1200V10N is Schoktty Barrier Diode manufactured by Prisemi.
PSICS2DP1200V10N datasheet preview

PSICS2DP1200V10N Datasheet

Part number PSICS2DP1200V10N
Datasheet PSICS2DP1200V10N Datasheet PDF (Download)
File Size 462.26 KB
Manufacturer Prisemi
Description Schoktty Barrier Diode
PSICS2DP1200V10N page 2 PSICS2DP1200V10N page 3

PSICS2DP1200V10N Overview

1.45 2.0 6 30 25 600 45 34 Max. 1.8 100 500 - Units V μA nC pF Parameter (Junction to case) (Junction to ambient) Soldering Temperature Typical Characteristics Symbol RθJC RθJA Tsold Min. - Units ℃/W ℃/W ℃ Fig.1 Forward Characteristics Rev.06.0 2 Fig.2 Reverse Characteristics .prisemi.

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