PSM6N03R7 Overview
The PSM6N03R7 uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications.
Datasheet Details
| Part number | PSM6N03R7 |
|---|---|
| Datasheet | PSM6N03R7-Prisemi.pdf |
| File Size | 445.26 KB |
| Manufacturer | Prisemi |
| Description | N-Channel MOSFET |
|
|