| Part number | PSM6N30V20 |
|---|---|
| Datasheet | PSM6N30V20-Prisemi.pdf |
| File Size | 391.34 KB |
| Manufacturer | Prisemi |
| Description | N-Channel MOSFET |
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The PSM6N30V20 uses split gate trench technology to provide excellent Rdson low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 4.0 @ VGS = 10V ID(A).
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