| Part number | PSMD2P100V120 |
|---|---|
| Datasheet | PSMD2P100V120-Prisemi.pdf |
| File Size | 1.02 MB |
| Manufacturer | Prisemi |
| Description | N-Channel MOSFET |
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The PSMD2P100V120 uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. MOSFET Product Summary VDS(V) 100 RDS(on)(mΩ)(Typ) 3.0@ VGS = 10V ID(A) 189.
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