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PSMD2P100V120 - N-Channel MOSFET

General Description

The PSMD2P100V120 uses split gate trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for power management and high efficiency applications at high switching frequencies applications.

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Datasheet Details

Part number PSMD2P100V120
Manufacturer Prisemi
File Size 1.02 MB
Description N-Channel MOSFET
Datasheet download datasheet PSMD2P100V120 Datasheet

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Description The PSMD2P100V120 uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. MOSFET Product Summary VDS(V) 100 RDS(on)(mΩ)(Typ) 3.0@ VGS = 10V ID(A) 189 Feature  Low RDS(ON) - Ensures On-State Losses are Minimized  Excellent Qgd x RDS(ON) Product(FOM)  Advanced Technology for DC-DC Converts  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  100% UIS (Avalanche) Rated  Lead-Free Finish ; RoHS Compliant  Halogen and Antimony Free.