PSMD2P100V120
Description
The PSMD2P100V120 uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications.
MOSFET Product Summary
VDS(V) 100
RDS(on)(mΩ)(Typ) 3.0@ VGS = 10V
ID(A) 189
Feature
- Low RDS(ON)
- Ensures On-State Losses are Minimized
- Excellent Qgd x RDS(ON) Product(FOM)
- Advanced Technology for DC-DC Converts
- Small Form Factor Thermally Efficient Package
Enables Higher Density End Products
- 100% UIS (Avalanche) Rated
- Lead-Free Finish ; Ro HS pliant
- Halogen and Antimony Free. ”Green” Device
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Single Pulse Avalanche Current @ L=0.1m H
Single Pulse Avalanche Energy @ L=0.1m H
Total Power...
