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Description
The PSMD2P100V120 uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications.
MOSFET Product Summary
VDS(V) 100
RDS(on)(mΩ)(Typ) 3.0@ VGS = 10V
ID(A) 189
Feature
Low RDS(ON) - Ensures On-State Losses are Minimized Excellent Qgd x RDS(ON) Product(FOM) Advanced Technology for DC-DC Converts Small Form Factor Thermally Efficient Package
Enables Higher Density End Products 100% UIS (Avalanche) Rated Lead-Free Finish ; RoHS Compliant Halogen and Antimony Free.