PSMTO15R4H
Description
The PSMTO15R4H uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications.
VDS(V) 150
MOSFET Product Summary
RDS(on)(mΩ)(Typ) 4.2@ VGS = 10V
ID(A) 185
PSMTO15R4H N-Channel MOSFET
TO-220
DG S
Feature
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- PWM applications
- Load Switch
- Power Management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Total Power Dissipation3)
Avalanche Current4)
Avalanche Energy4)
Thermal Resistance , Junction-to-Case5)
Thermal Resistance Junction-to-Ambient6)
Junction and Storage Temperature Range
Rev.06.0
Symbol VDS VGS
IDM PD IAS EAS RθJC RθJA...
