PSMTO15R4H Overview
The PSMTO15R4H uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. VDS(V) 150 MOSFET Product Summary RDS(on)(mΩ)(Typ) 4.2@ VGS = 10V ID(A) 185 PSMTO15R4H N-Channel MOSFET GDS TO-220 D DG.