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PSMTO15R4H - N-Channel MOSFET

Description

The PSMTO15R4H uses split gate trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for power management and high efficiency applications at high switching frequencies applications.

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Datasheet Details

Part number PSMTO15R4H
Manufacturer Prisemi
File Size 477.50 KB
Description N-Channel MOSFET
Datasheet download datasheet PSMTO15R4H Datasheet

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Full PDF Text Transcription

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Description The PSMTO15R4H uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. VDS(V) 150 MOSFET Product Summary RDS(on)(mΩ)(Typ) 4.
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