PTVSHC3D5VB
PTVSHC3D5VB is TVS Protect manufactured by Prisemi.
Description
The PTVSHC3D5VB ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook puters, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower 2
1 operating voltage, lower clamping voltage and no device degradation when pared to
MLVs. The PTVSHC3D5VB protects sensitive semiconductor ponents from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The
PTVSHC3D5VB is available in a SOD-323 package with working voltages of 5 volt. It is used to meet the ESD immunity requirements of IEC 61000-4-2, (±30k V air, ±30k V contact discharge)
Feature
Applications
- 2000W Peak pulse power per line (t P = 8/20μs)
- - SOD-323 package
- - Response time is typically < 1 ns
- - Protect one I/O or power line
- - Low clamping Voltage
- - Ro HS pliant
- - Transient protection for data lines to IEC 61000-4-2(ESD)
- ±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)-
Cell phone handsets and accessories Personal digital assistants (PDA’s) Notebooks, desktops, and servers Portable instrumentation Cordless phones Digital cameras Peripherals MP3 players
Mechanical Characteristics
- Lead finish:100% matte Sn(Tin)
- Mounting position: Any
- Qualified max reflow temperature:260℃
- Pure tin plating: 7 ~ 17 um
- Pin flatness:≤3mil
Rev.06.2
.prisemi.
ESD Protector
Electronics Parameter
Symbol
VRWM IR VBR IT IPP VC PPP CJ
Parameter
Peak Reverse Working Voltage Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Peak Pulse Power Junction Capacitance
VC VBR VRWM
IT IR
IR IT
VRWM VBR VC
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Symbol...
