V58C2256404SC Datasheet | ProMOS Technologies

.Data Sheet.co.kr V58C2256(804/404/164)SC- I 256 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B DDR400 Clock Cycle Time (t CK2) Clock Cycle Time (t CK2.5) Clock Cycle Time (t CK3) System Frequency (f CK max) 7.5 ns 5ns 5ns 200 MHz 5 DDR400 7.5 ns 6ns 5ns 200 MHz 6 DDR333 7.5 ns 6 ns 6 ns 166 MHz 7 DDR266 7.5ns 7ns 7 ns 143 MHz Features - High speed data transfer rates with system frequency up to 200 MHz - Data Mask for Write Control - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 2.5, 3 - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type - Automatic and Controlled Precharge mand - Power Down Mode - Auto Refresh and Self Refresh - Refresh Interval: 8192 cycles/64 ms - Available in 66-pin 400 mil TSOP or 60 Ball FBGA - SSTL-2 patible I/Os - Double Data Rate (DDR) - Bidirectional Data Strobe (DQS) for input and output data, active on both edges - On-Chip DLL aligns DQ and DQs transitions with CK transitions - Differential clock inputs CK and CK - Power Supply 2.5V ± 0.2V - Power Supply 2.6V ± 0.1V for DDR400 - t RAS lockout supported - Concurrent auto precharge option is supported - Industrial Temperature (TA): -40C to +85C - Note: (-5B) Supports PC3200 module with 2.5-3-3 timing (-5) Supports PC3200 module with 3-3-3 timing (-6) Supports PC2700 module with 2.5-3-3 timing (-7) Supports PC2100 module with 2-2-2 timing Description...