ProMOS Technologies V58C2256804SC
The V58C2256(804/404/164)SC*I is a four bank DDR DRAM organized as 4 banks x 8Mbit x 8 (804), 4 banks x 4Mbit x 16 (164), or 4 banks x 16Mbit x 4 (404). The V58C2256(804/404/164)SC*I achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.| Part No. | V58C2256804SC |
|---|---|
| Datasheet | V58C2256804SC Download |
| Manufacturer |  ProMOS Technologies |
| Description | 256 Mbit DDR SDRAM |
| Buy | Stock & Price |
FEATURES
● High speed data transfer rates with system frequency up to 200 MHz● Data Mask for Write Control
● Four Banks controlled by BA0 & BA1
● Programmable CAS Latency: 2, 2.5, 3
● Programmable Wrap Sequence: Sequential or Interleave
● Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type
● Automatic and Controlled Precharge Command
● Power Down Mode
● Auto Refresh and Self Refresh
● Refresh Interval: 8192 cycles/64 ms
● Available in 66-pin 400 mil TSOP or 60 Ball FBGA
● SSTL-2 Compatible I/Os
● Double Data Rate (DDR)
● Bidirectional Data Strobe (DQS) for input and output data, active on both edges
● On-Chip DLL aligns DQ and DQs transitions with CK transitions
● Differential clock inputs CK and CK
● Power Supply 2.5V ± 0.2V
● Power Supply 2.6V ± 0.1V for DDR400
● tRAS lockout supported
● Concurrent auto precharge option is supported
● Industrial Temperature (TA): -40C to +85C *Note: (-5B) Supports PC3200 module with 2.5-3-3 timing (-5) Supports PC3200...
