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V58C2512164SBI5 - High Performance 512M-Bit DDR SDRAM

Description

The V58C2512(804/404/164)SB is a four bank DDR DRAM organized as 4 banks x 16Mbit x 8 (804), 4 banks x 32Mbit x 4 (404), 4 banks x 8Mbit x 16 (164).

Features

  • High speed data transfer rates with system frequency up to 200MHz.
  • Data Mask for Write Control.
  • Four Banks controlled by BA0 & BA1.
  • Programmable CAS Latency: 2.5, 3.
  • Programmable Wrap Sequence: Sequential or Interleave.
  • Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type.
  • Automatic and Controlled Precharge Command.
  • Power Down Mode.
  • Auto Refresh and Self Refresh.
  • Refresh Interval: 8192 cycles/64 ms.
  • Available i.

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Datasheet Details

Part number V58C2512164SBI5
Manufacturer ProMOS Technologies
File Size 0.99 MB
Description High Performance 512M-Bit DDR SDRAM
Datasheet download datasheet V58C2512164SBI5 Datasheet

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Other Datasheets by ProMOS Technologies

Part Number Description
V58C2512164SB High Performance 512M-Bit DDR SDRAM
V58C2512404SB High Performance 512M-Bit DDR SDRAM
V58C2512804SB High Performance 512M-Bit DDR SDRAM
V58C2512SB High Performance 512M-Bit DDR SDRAM
V58C2256164SC 256 Mbit DDR SDRAM

Full PDF Text Transcription

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www.DataSheet4U.com V58C2512(804/404/164)SB HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 DDR400 Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK3) System Frequency (fCK max) 6ns 5ns 200 MHz 6 DDR333 6ns 166 MHz 75 DDR266 7.5ns 133 MHz Features ■ High speed data transfer rates with system frequency up to 200MHz ■ Data Mask for Write Control ■ Four Banks controlled by BA0 & BA1 ■ Programmable CAS Latency: 2.
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