Datasheet4U Logo Datasheet4U.com

PJ2N3906 - PNP Epitaxial Silicon Transistor

📥 Download Datasheet

Datasheet preview – PJ2N3906

Datasheet Details

Part number PJ2N3906
Manufacturer Promax Johnton
File Size 220.58 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet PJ2N3906 Datasheet
Additional preview pages of the PJ2N3906 datasheet.

📁 Similar Datasheet

  • PJ2N9014 - NPN Epitaxial Silicon Transistor (ETC)
  • PJ2301 - 20V P-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJ2306 - 30V N-Channel MOSFET (Pan Jit International)
  • PJ2700 - Low Dropout Positive Voltage Regulators (Promax-Johnton)
  • PJ2822M - Dual Low-Voltage Power Amplifier (PJ)
Other Datasheets by Promax Johnton
  • PJ2N3904 - NPN Epitaxial Silicon Transistor
  • PJ2N9012 - PNP Epitaxial Silicon Transistor
  • PJ2N9013 - NPN Epitaxial Silicon Transistor
  • PJ2N9015 - PNP Epitaxial Silicon Transistor
  • PJ20C40 - 20 AMP SCHOTTKY BARRIER RECTIFIER
  • PJ2950 - (PJ2950 / PJ2951) 150mA Low Dropout Voltage Regulators
  • PJ2951 - (PJ2950 / PJ2951) 150mA Low Dropout Voltage Regulators

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPO SE TRANSISTO R • • Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: P C (max) = 625 mW . TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj T stg Value 40 40 5 200 625 150 -55~150 Unit V V V mA mW ℃ ℃ Device PJ2N3906CT PJ2N3906CX Operating Temperature -20℃～+85℃ Package TO-92 SOT-23 P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2. Emitter 3.
Published: |