P25T12H Datasheet PDF | Puya Semiconductor

Puya Semiconductor P25T12H

The P25T22H/12H is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications.

Part No.	P25T12H
Datasheet	P25T12H Download
Manufacturer	Puya Semiconductor
Description	Serial Standard and Dual I/O Flash Memory
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DESCRIPTION

By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. Specifically designed for use in many different systems, the device supports read, program, and erase operations with a wide supply voltage range of 2.3V to 3.6V. No separate voltage is required for programming and erasing. Puya Semiconductor Page 4 of 44 P25T22H/12H Datasheet 3 Pin Definition 3.1 Pin Configurations CS# 1 SO 2 WP# 3 GND 4 8 Vcc 7 NC 6 SLCK 5 SI 8-PIN SOP (150mil/208mil) and TSSOP CS# 1 SO 2 WP# 3 GND 4 8 VCC 7 NC 6 SLCK 5 SI 8-Land USON (2x3mm) 3.2 Pin Descriptions No.