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LSIAPD-S200 - Avalanche Photodiode

This page provides the datasheet information for the LSIAPD-S200, a member of the LSIAPD-S200-Q Avalanche Photodiode family.

Description

2mm flat window TO Model: 0 Type B PIN description 2mm flat window TO Model: 0 Type B PIN description Large flat window TO Model: L0 Type B PIN description ball lens TO Model: 1 Type A PIN description Bottom View Mini-TO Can package and Lead Type B PIN description Bottom View flat window Mini

Features

  • High reliability, low dark current.
  • Top illumination Planar APD.
  • High Gain up to M=30.
  • High bandwidth up to 1.25GHZ 1 0 L0.
  • Hermetic TO46 Can or Mini TO Can or with fiber coupling.

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Datasheet preview – LSIAPD-S200

Datasheet Details

Part number LSIAPD-S200
Manufacturer Q-BAIHE
File Size 0.98 MB
Description Avalanche Photodiode
Datasheet download datasheet LSIAPD-S200 Datasheet
Additional preview pages of the LSIAPD-S200 datasheet.

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Full PDF Text Transcription

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200um InGaAs M=30 Avalanche Photodiode Version: 4.2 17-05-13 Model: LSIAPD-S200 Features:  High reliability, low dark current  Top illumination Planar APD  High Gain up to M=30  High bandwidth up to 1.25GHZ 1 0 L0  Hermetic TO46 Can or Mini TO Can or with fiber coupling Applications:  Ultra Weak`ptical detecting  Optical sensor, OTDR  Laser lidar, laser range finding M0  high resolution Optical Coherence Tomography  Science analysis and experiment M1 Fiber coupling The absolute values Operating voltage Operating 0.99×VBR temperature Forward current 8mA storage temperature -40～+85℃ Power dissipation Soldering -45～+100℃ temperature(time) 50mW 260℃（10s） The opto-eletronic characteritics（@Tc=22±3℃） Parameters Sym.
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