QL65E7S-A-L - LASER DIODE

Key Features

- Visible Light Output : λp = 650 nm - Optical Power Output : 7mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

QL65E7S-A-L laser diode by QSI - Datasheet Preview

Datasheet Details

Part number	QL65E7S-A-L
Manufacturer	QSI
File Size	160.44 KB
Description	LASER DIODE
Datasheet	QL65E7S-A-L Datasheet

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Other Datasheets by QSI

Part Number	Description
QL65E7S-A	LASER DIODE
QL65E7S-B	LASER DIODE
QL65E7S-B-L	LASER DIODE
QL65E7S-C	LASER DIODE
QL65E7S-C-L	LASER DIODE

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL65E7S-A/B/C-L Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65E7S-A/B/C-L InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 Oct. 2004 ♦OVERVIEW QL65E7S-A/B/C-L is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 7mW and low operation current for optoelectronic devices such as Optical storage & Bar Code Reader.